Dynamic and temperature effects in toggle magnetic random access memory
نویسندگان
چکیده
منابع مشابه
Single-domain model for toggle MRAM
An overview is presented of the use of a single-domain model for developing an understanding of the switching of two coupled magnetic free layers for toggle MRAM (magnetic random access memory). The model includes the effects of length, width, thickness, magnetization, thickness asymmetry, intrinsic anisotropy, exchange coupling, dipole coupling, and applied magnetic field. First, a simple pert...
متن کاملEffects of Brace-viscous Damper System on the Dynamic Response of Steel Frames
In this study, the effects of three different viscous damper configurations, chevron, diagonal and toggle, as well as brace stiffness on the performance of brace-viscous damper system in various steel frams under different earthquake records were investigated. A finite element software, ANSYS, is exploited to develop the numerical models. To verify the numerical simulations, their results were ...
متن کاملA Compact MTJ Model Incorporating Temperature and Voltage Dependencies using Verilog-A
A compact model for MTJs incorporating temperature and voltage dependencies is presented. Written in Verilog-A, the model is intended to aid in the development of emerging spintronics circuits (i.e. STT-MRAM). Matching with detailed micromagnetic simulations and measurements from 65nm CoFeB/MgO/CoFeB MTJs is shown. Introduction Recent advances in MgO based magnetic tunnel junctions (MTJs) show ...
متن کاملStacking magnetic random access memory atop microprocessors: an architecture-level evaluation
Magnetic random access memory (MRAM) has been considered as a promising memory technology because of its attractive properties such as non-volatility, fast access, zero standby leakage and high density. Although integrating MRAM with complementary metal-oxide-semiconductor (CMOS) logic may incur extra manufacturing cost because of the hybrid magnetic-CMOS fabrication process, it is feasible and...
متن کاملTest and Reliability of Magnetic Random Access Memories
Magnetic Random Access Memories (MRAMs) are “Spintronics” devices that store data in Magnetic Tunnel Junctions (MTJs) and have high data processing speed, low power consumption and high integration density compared with FLASH memories. Also, MRAM offers relative large Tunnel Magneto Resistance (TMR) at room temperature and it is compatible with Complementary Metal Oxide Semiconductor (CMOS) pro...
متن کامل